S.U.R. & R Tools Transistors silicon KT808BM analoge BDY71, 2SC1618, 2N6374 USSR 5 pcs
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Make sure this fits by entering your model number.Transistors silicon KT808BM analoge BDY71, 2SC1618, 2N6374 USSR 5 pcsThere are more than 25 000 items in our stock. The full listings can be found here www.amazon.com/shops/A19NX3RFNSYB6RIf you can't find the item you need, you may contact us.
상품설명
KT808BM Silicon Transistors mezaplanarnye structure npn switching. Designed for use in switching devices, generators, horizontal, electronic voltage regulators. The main technical characteristics of the transistor KT808BM: The structure of the transistor: npn; Pk t max - Dissipated power collector with heat sink: 60W; fgr - Cut-off frequency of the transistor current gain for the common-emitter: not less than 8 MHz; Uker max - maximum collector-emitter voltage at a given current collector and a given resistance in the circuit of the base-emitter: 100 (160 imp.) V; Uebo max - Maximum voltage emitter-base junction reverse current at a given emitter and collector open circuit: 5 V; Ik max - Maximum DC Collector Current: 10 A; Iker - Reverse current collector-emitter voltage for a given reverse voltage of the collector-emitter voltage and resistance in the base-emitter: 2 mA (120 V); h21e - Static current transfer ratio of the transistor to the common-emitter: 20 ... 125; CK - collector junction capacity: up to 500 pF; Rke us - saturation resistance between the collector and emitter: no more than 0.33 ohms
Make sure this fits by entering your model number.Transistors silicon KT808BM analoge BDY71, 2SC1618, 2N6374 USSR 5 pcsThere are more than 25 000 items in our stock. The full listings can be found here www.amazon.com/shops/A19NX3RFNSYB6RIf you can't find the item you need, you may contact us.
상품설명
KT808BM Silicon Transistors mezaplanarnye structure npn switching. Designed for use in switching devices, generators, horizontal, electronic voltage regulators. The main technical characteristics of the transistor KT808BM: The structure of the transistor: npn; Pk t max - Dissipated power collector with heat sink: 60W; fgr - Cut-off frequency of the transistor current gain for the common-emitter: not less than 8 MHz; Uker max - maximum collector-emitter voltage at a given current collector and a given resistance in the circuit of the base-emitter: 100 (160 imp.) V; Uebo max - Maximum voltage emitter-base junction reverse current at a given emitter and collector open circuit: 5 V; Ik max - Maximum DC Collector Current: 10 A; Iker - Reverse current collector-emitter voltage for a given reverse voltage of the collector-emitter voltage and resistance in the base-emitter: 2 mA (120 V); h21e - Static current transfer ratio of the transistor to the common-emitter: 20 ... 125; CK - collector junction capacity: up to 500 pF; Rke us - saturation resistance between the collector and emitter: no more than 0.33 ohms
2021-09-26 07:14:40